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MORE INFO PLEASE CONTACT BELOW
ATTN: Michael Zhu
Email: uniweighyeah.net or uniweigh
gmail.com
P N IC 4 8 12 inch round polycrystal silicon wafer/ semiconductor polycrystalline circular silicon wafer
size:3" thickness:200mm+/-20um Application:diode, triode,semiconductor, IC,etc.
PRODUCTS SPECIFICATION 156 MONO SILICON WAFER
MATERIAL PROPERTIES | ||
PROPERTY | SPECIFICATION A | REFERENCED STANDARD A |
GROWTH METHOD | CZ |
|
CRYSTAL ORIENTATION | <100>±2º | ASTM F26 |
DONOR TYPE | P/boron | ASTM F42 |
OXYGEN CONCERTRATION | ≤1.0x1018 atoms/cm3 | ASTM F1188 measured on center |
CRABON CONCENTRATION | ≤5.0x1016 atoms/cm3 | ASTM F1391 measured on center of slug |
DISLOCATION DENSITY | ≤3000pcs/cm3 | ASTM F47-88 measured on slug in ingot tail |
ELECTRICAL PROPERTIES | ||
RESISITIVITY | 1.0-3.0ohm-cm | ASTM F43 |
LIFETIME | ≥10us | ≥10us |
GEOMETRY | ||
GEOMETRY | SQUARE |
|
THICKNESS | 180um±20um | ASTM F533/EDGE 6MM 4, CENTER 1 |
TTV | ≤30um | ASTM F567/EDGE 6MM 4, CENTER 1 |
DIMENSION | 156±0.5um |
|
SAW MARKS | depth≤15um, depth≤15um | ASTM F567 |
SURFACE QUALITY | Cleaned, no grease stains | Profilometer/sj-210 |
EDGE CHIPPING | depth≤0.3mm,length≤0.5mm | By sight |
INDENTATION | Depth≤0.3um, length≤0.5mm, no V shape cave, total≤2 | By sight |
BOW | <40um | Astm f657;by non-contact capacitive |
ROUGHNESS(RA) | <1.0um | Profilometer/sj-210 |
PACKAGE AND LABELS | ||
PACKAGE | 400PCS/PACKAGE | 100PCS/BAG |
LABELS | PART NO. P.O. NO. NO OF WAFER, DIMENSION | TEMP, HUMIDITY |
Polycrystalline silicon bar
Sample polycrystalline silicon wafer
Application IC board
Application solor energy board
Solar energy power plant
Other interested types solar products
MORE INFO PLEASE CONTACT BELOW
ATTN: Michael Zhu
Email: uniweighyeah.net or uniweigh
gmail.com