Газовая хроматография массовая спектрометрия

Описание и отзывы

Характеристики

GC-MS-II  Gas Chromatography Mass Spectrometry

 

 

Features:

Independent research and development of GC system with electronic flow and pressure control (EFC, EPC)

Independent research and development and efficient filament, electron emission efficiency is high, the largest up to 350 mu

Single quadrupole mass with pre quadrupole analyzer, effectively reduce the sample measurement process of quadrupole pollution;

With high energy conversion with electron multiplier provides excellent sensitivity;

Import of mechanical pump and molecular pump excellent vacuum system, ensure the high stability and reliability of the system;

Equipped with a full range of vacuum gauge, real-time monitoring vacuum conditions;

Perfect protection system to ensure that the instrument is abnormal condition of protection system of key parts, prolong the service life of the instrument;

The advanced RF power digital compensation technology, can make all the quality within the scope of the mass spectrum peak to achieve high sensitivity and resolution

 

GC Technical indicators:

Injection port temperature:450 ℃, any temperature controlled

Pressure control range: 0-100 psi, the control precision of 0.002 psi

Pressure control mode: the electronic pressure control, support constant voltage and constant current

Bypass mode: distributary and not split injection port, the largest tap - 1000:1

Column temperature box operating temperature: room temperature + 4 ℃ ~ 450 ℃

The oven heating rate: 120 ℃ / min (oven)

 

Temperature programmed heating platform: order 7 8 platform

Automatic sampler: matching

 

MS technical indicators:

Ionization energy (EI) : 5 eV - 250 eV (adjustable)

Quality range: 1.5-1000 amu

Resolution: unit mass resolution

Ion source temperature: 100-350 ℃

Filament emission current: 0-350 ua

Temperament interface temperature: 450 ℃

Quality shaft stability: + / - 0.10 amu / 48 HRS

Sensitivity: full scan, 1 pg eight fluorinated naphthalene (OFN) in the m/z 272 amu,

Signal to noise ratio (S/N) or greater spake (RMS)

Scan rate, maximum 10000 amu/s