Производитель по индивидуальному заказу однокристаллическая подложка Германия

Main Property Parameters

Growth Method

Czochralski

Crystal System

Cubic

Crystal Lattice Constant

a=5.65754 Å

Density

5.323g/cm3

Melt Point

937.4℃

Doping Element

no

Sb

Ga

Type

/

N

P

Resistivity

>35Ωcm

0.01~35 Ωcm

0.05~35 Ωcm

EPD

<4×103/cm2

<4×103/cm2

<4×103/cm2

Dimension(mm)

10x3,10x5,10x10,15x15,,20x15,20x20,

Dia50.8 mm ,dia76.2mm, Dia100 mm

Thickness

0.5mm,1.0mm

Polishing

One side or two sides

Crystal Orientation

<100>,<110>,<111>,±0.5º

Crystal Plane Orientation Accuracy

±0.5°

Edge Orientation Accuracy

2°(special requirements <1°)

Bevel Wafer

According to specific requirements, wafers with edge-oriented crystal planes inclined at a specific angle (inclination angle 1°-45°) can be processed.

Surface Roughness

≤5Å(5µm×5µm)

Packaging

Clean bag (100), Super clean room (1000)